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 RJK1525DPS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1314-0200 Rev.2.00 Feb 08, 2007
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM)
D
G
1. Gate 2. Drain 3. Source
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg
Note1
Ratings 150 30 17 50 17 50 17 21.6 30 4.17 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
Rev.2.00 Feb 08, 2007 page 1 of 6
RJK1525DPS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 150 -- -- 3.0 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 11 0.089 680 150 22 22 70 47 11 18 4.2 8.3 0.88 95 0.3 Max -- 1 0.1 4.5 -- 0.110 -- -- -- -- -- -- -- -- -- -- 1.40 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test conditions ID = 10 mA, VGS = 0 VDS = 150 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 8.5 A, VDS = 10 V Note4 ID = 8.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 8.5 A VGS = 10 V RL = 8.8 Rg = 10 VDD = 120 V VGS = 10 V ID = 17 A IF = 17 A, VGS = 0 Note4 IF = 17 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00 Feb 08, 2007 page 2 of 6
RJK1525DPS
Main Characteristics
Power vs. Temperature Derating
40 1000 300 30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10 3 1 0.3
10 10 PW 1 m 0 s s (1s = 1 s 0m DC hot) s (Tc Ope = 2 rati 5C on )
20
10
Operation in this RDS(on) Ta = 25C
0.1 area is limited by 0.03
0
0.01 50 100 150 200 1
3
10
30
100
300
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 6.5 V 7V Pulse Test 6V 12 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
10 V
Drain Current ID (A)
16
16
12
8
5.5 V
8 Tc = 75C 25C -25C
4
VGS = 5 V
4
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) ()
8 Pulse Test 6
Static Drain to Source on State Resistance vs. Drain Current
1 VGS = 10 V 0.5
0.2 0.1 0.05
4 ID = 25 A 2 12.5 A 8.5 A 0 4 8 12 16 20
0.02 0.01 1 3 10 30 Pulse Test 100 300 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Feb 08, 2007 page 3 of 6
RJK1525DPS
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
0.5
VGS = 10 V
100 30 10 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 75C
Pulse Test
0.4
Tc = -25C
0.3
25C
0.2
ID = 25 A 12.5 A 8.5 A
0.1 0 -25
0
25
50
75
100 125
150
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
100000 30000 VGS = 0 f = 1 MHz
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500 200 100 50 20 10 5 2 1 1 3 10 di / dt = 100 A / s VGS = 0, Ta = 25C 30 100 300 1000
Capacitance C (pF)
10000 3000 1000 300 100 30 10 0 50 Crss 100 150 Coss Ciss
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage VDS (V)
ID = 17 A 180 VDD = 30 V 60 V 120 V VDS VGS 12
Gate to Source Voltage VGS (V)
240
16
1000
Switching Time t (ns)
VGS = 10 V, VDD = 75 V PW = 5 s, duty 1 % RG = 10 100 tf td(off) td(on) 10 tr tf
tr
120
8
60
VDD = 120 V 60 V 30 V 4 8 12 16
4
0
0 20
1 0.1
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current ID (A)
Rev.2.00 Feb 08, 2007 page 4 of 6
RJK1525DPS
Reverse Drain Current vs. Source to Drain Voltage
50 5
Gate to Source Cutoff Voltage vs. Case Temperature
VDS = 10 V ID = 10 mA 4 1 mA 3
Reverse Drain Current IDR (A)
40
30
20 VGS = 0 V 10 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Gate to Source Cutoff Voltage VGS(off) (V)
2
0.1 mA
1 0 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 1 0.3 0.1 0.03 0.01 0.003
Tc = 25C D=1 0.5
0.2
0.1
0.05
0.02 0.01
ch - c (t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C
lse
1s
ho
u tp
PDM PW T
D=
PW T
0.001 10
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 75 V Vout Monitor
PW (s) Waveform
90% Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10%
Rev.2.00 Feb 08, 2007 page 5 of 6
RJK1525DPS
Package Dimensions
Package Name TO-220CFM JEITA Package Code RENESAS Code PRSS0003AE-A Previous Code TO-220CFM / TO-220CFMV MASS[Typ.] 1.9g
Unit: mm
10.0 0.3
3.2 0.2
4.5 0.3 2.7 0.2
4.1 0.3
0.6 0.1
2.5 0.2
2.54
2.54
0.7 0.1
Ordering Information
Part No. RJK1525DPS-00-T2 Quantity 600 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Feb 08, 2007 page 6 of 6
13.6 1.0
1.0 0.2 1.15 0.2
12.0 0.3
15.0 0.3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0


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